Title:
PHOTOELECTRIC CONVERSION DEVICE
Document Type and Number:
Japanese Patent JPS60124978
Kind Code:
A
Abstract:
PURPOSE:To obtain characteristics stable and excellent regardless of the spectrum of incident light by a method wherein the first photoelectric conversion element having crystallinity and the second photoelectric conversion element containing a non single crystal material such as a micro crystal are connected in parallel. CONSTITUTION:A doped micro crystal Si-H alloy layer 3, a non-doped amorphous Si-H alloy layer 4, and a doped Si-C-H alloy layer 5 are successively deposited on a doped polycrystalline Si substrate 2 by the plasma CVD method. An Al electrode 1 is formed on the lower surface of the substrate 2, and a clear electrode 6 made of an ITO film on the upper surface of the alloy layer 5, respectively by the electron beam deposition method. The electrodes 1 and 6 are connected with a lead wire 14, and photoelectric conversion elements 2 and 3 and those elements 3, 4, and 5 are connected in parallel by drawing a lead wire 14 out of the alloy layer 3.
Inventors:
GOTOU AKIRA
Application Number:
JP23265283A
Publication Date:
July 04, 1985
Filing Date:
December 12, 1983
Export Citation:
Assignee:
HITACHI MAXELL
International Classes:
H01L31/00; H01L31/0392; H01L31/04; H01L31/078; H01L31/10; (IPC1-7): H01L31/00; H01L31/04; H01L31/10
Attorney, Agent or Firm:
Kenjiro Take