Title:
PHOTOELECTRIC GENERATING ELEMENT AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPS59194478
Kind Code:
A
Abstract:
PURPOSE:To enhance the photoelectric conversion efficiency by forming at least one semiconductor layer in the mixture of a thin amorphous silicon fine crystal film and a thin material film having large energy gap. CONSTITUTION:A thin amorphous silicon fine crystal film P2 is formed to bury between a thin discontinuous film P1 having large energy gap on a substrate to form a P type semiconductor layer 19. Then, an I-type semiconductor layer 20 is formed, an N type semiconductor layer 21 is formed thereon, to form a photoelectric generating element. The semiconductor layer of a light incident side formed in this manner can be formed to mix the thin material film P1 and the crystal film P2, thereby providing excellent light transmission and preferable conductivity.
Inventors:
AOYAMA TAKAHIRO
NOZAWA MASAHIKO
NOZAWA MASAHIKO
Application Number:
JP6815483A
Publication Date:
November 05, 1984
Filing Date:
April 18, 1983
Export Citation:
Assignee:
OSAKA TRANSFORMER CO LTD
International Classes:
H01L31/04; H01L31/0384; H01L31/06; H01L31/075; H01L31/077; H01L31/18; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS57204178A | 1982-12-14 | |||
| JPS57187973A | 1982-11-18 |
Attorney, Agent or Firm:
Hidetoshi Matsumoto
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