Title:
PHOTOELECTRIC SENSITIVE DIODE DEVICE AND MANUFACTURE OF THE SAME
Document Type and Number:
Japanese Patent JPS62226672
Kind Code:
A
Abstract:
A photosensitive diode element and method of manufacture. The diode element is comprised of a first layer of n-type hydrogenated amorphous-silicon forming a cathode, and a second layer of p+ type material forming an anode, the second layer overlying the first layer and being transparent to optical energy. As a result of using hydrogenated amorphous-silicon, the phtosensitive diode element according to the present invention has characteristics of high photoconductivity, controllably variable optical gap, and thin film structure. A photosensitive diode array formed from the subject diode elements is easily fabricated, employs straightforward circuitry for addressing each diode element, and is characterized by low crosstalk between elements, maximized optical sensitivity and broad dynamic range.
Inventors:
METEIN EIKUTEITSUKU
Application Number:
JP4987087A
Publication Date:
October 05, 1987
Filing Date:
March 04, 1987
Export Citation:
Assignee:
MITEL CORP
International Classes:
H01L27/146; H01L31/0248; H01L31/10; H01L31/103; H01L31/108; (IPC1-7): H01L27/14; H01L31/04; H01L31/10
Domestic Patent References:
| JPS54139342A | 1979-10-29 | |||
| JPS5739588A | 1982-03-04 | |||
| JPS56115577A | 1981-09-10 |
Attorney, Agent or Firm:
Aoyama Aoi
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