To provide a higher sensitive photoelectric surface having an active layer dissolving crystal defects and an electronic tube using the photoelectric surface.

The photoelectric surface is constituted by epitaxially growing and forming an active layer 21 consisting of GaxIn1-xP and for performing photoelectric transfer on a semiconductor substrate 10 consisting of GaAs and by very thinly forming a surface layer 22 consisting of Cs2O on the active layer 21. The above constitution depresses lattice mismatch by appropriately changing the atomic composition ratio of the active layer 21. Thus, crystal defects in the active layer 21 are dissolved, lengthening the diffusion length of a photoelectron generated in the active layer 21. Thus, the photoelectric surface comes to higher sensitivity rather than conventional sensitivity. An electronic tube using the photoelectric surface detects weaker light rather than conventional light.