To reduce depletion layer capacity, restrain an off electric current small and realize high speed responsiveness by restraining formation of a depletion layer 13 on a surface of a semiconductor substrate 11.
A photoelectric transfer device projected and formed on the semiconductor substrate 11 has an electron emitter 16 to generate electron by receiving light, an anode 20 to receive the electron emitted from this electron emitter 16 and a gate electrode 18 provided to face the semiconductor substrate 11 on which the electron emitter 16 is formed and to emit the electron emitted from the same electron emitter 16 toward the anode 20. A lower part electrode 15 to be maintained at a negative electric potential relative to the gate electrode 18 is inserted between this gate electrode 18 and a surface of the semiconductor substrate 11 on which the electron emitter 16 is formed.
ISHIDA KATSUHIDE
KOTANI MASAKATSU
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