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Title:
フォトマスク基板
Document Type and Number:
Japanese Patent JP6715360
Kind Code:
B2
Abstract:
To provide a method for manufacturing a photomask by which a pattern for transfer having high dimensional accuracy can be formed.SOLUTION: The method for manufacturing a photomask includes: a step of preparing a photomask substrate with a resist, which includes an optical film, a reflective thin film, and a resist film layered on a transparent substrate; a resist pattern formation step; a thin film etching step of forming a reflective thin film pattern; a step of removing the resist pattern; a dimension measurement step of measuring a dimension of the reflective thin film pattern; an optical film etching step of wet-etching the optical film by using the reflective thin film pattern as a mask based on an etching time of the optical film that is determined based on the measured dimension; and a step of removing the reflective thin film. In the dimension measurement step, the dimension is measured by irradiating a measurement part of the reflective thin film pattern with inspection light and detecting the reflected light of the inspection light.SELECTED DRAWING: Figure 4(a)

Inventors:
Umeda Yoshihiro
Application Number:
JP2019018699A
Publication Date:
July 01, 2020
Filing Date:
February 05, 2019
Export Citation:
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Assignee:
HOYA CORPORATION
International Classes:
G03F1/54; G03F1/32; G03F1/52; G03F7/20
Domestic Patent References:
JP2013088814A
JP53040281A
JP2012215829A
JP2013137576A
Attorney, Agent or Firm:
Patent business corporation Tsukuni