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Title:
PHOTORESIST COMPOSITION
Document Type and Number:
Japanese Patent JP2000231200
Kind Code:
A
Abstract:

To provide a photoresist composition to be used for the manufacture a semiconductor, superior in uniform coating and small in pattern defect after development and wide in focal depth.

The photoresist coating composition comprising at least an alkali-soluble resin and a radiation-sensitive material and a solvent is manufactured under normal pressure and stored airtightly in a vessel is exposed to a reduced pressure of 200 mm Hg, and after that time, an increase of particles of ≥0.3 μm particle diameter is ≤500 pieces 1 ml of the liquid.


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Inventors:
NAKANO KOJI
KUSUMOTO TADASHI
FUJITO TAKESHI
TANAKA KATSUTOMO
Application Number:
JP3251299A
Publication Date:
August 22, 2000
Filing Date:
February 10, 1999
Export Citation:
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Assignee:
MITSUBISHI CHEM CORP
International Classes:
H01L21/027; G03F7/004; G03F7/023; G03F7/26; (IPC1-7): G03F7/26; G03F7/004; G03F7/023; H01L21/027
Attorney, Agent or Firm:
Hasegawa Moji



 
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