PHOTORESIST MONOMER, PHOTORESIST COPOLYMER, PHOTORESIST COMPOSITION, METHOD FOR FORMING PHOTORESIST PATTERN AND SEMICONDUCTOR ELEMENT

Japanese Patent JP2003176324

A

To provide a photoresist monomer for preventing the acid generated by an exposed part by an exposing process in a photolithography step from migrating into an unexposed part, and further to provide a copolymer of the monomer and a photoresist composition containing the copolymer.

An ultrafine pattern is formed by adding a copolymer of a compound having at least one or more copolymerizable carbon-carbon double bonds, and containing a repeating unit represented by formula (1) to a photoresist composition. As a result, the roughness of a line edge part (LER) and slope are improved. Not only the shape of the pattern but also adhesive strength to a substrate are improved by removing top loss.

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LEE GEUN SU
JUNG JAE CHANG
SHIN KI SOO
CHOI SE JIN
KIM DEOG BAE
KIM JAE HYUN

JP2002243609A

June 24, 2003

August 23, 2002

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HYNIX SEMICONDUCTOR INC
DONGJIN SEMICHEM CO LTD

G03F7/027; C07D273/00; C07D323/00; C08F226/06; C08F232/00; C08F234/02; G03F7/039; H01L21/027; (IPC1-7): C08F234/02; C08F226/06; C08F232/00; G03F7/039; H01L21/027

Hiroshi Arafune (1 person outside)

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