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Title:
PHOTORESIST MONOMER, PHOTORESIST COPOLYMER AND PREPARATION THEREOF, PHOTORESIST COMPOSITION, PHOTORESIST PATTERN FORMATION METHOD, AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2000080124
Kind Code:
A
Abstract:

To obtain a photoresist monomer having etching resistance, heat resistance, capability to adhere to substrates, photosensitivity, and solubility in a normal alkali developing soln. by using a compd. having a norbornene or bicyclooctoene structure.

A compd. of formula I (wherein m is 1 or 2) is used in the form of copolymer contg. the compd. of formula I and a compd. of formula I (wherein R* is an acid-sensitive protective group; and l is 1 or 2). Normally, t-butyl, 2-tetrahydrofuran, 2-tetrahydropyran, ethoxyethyl, and t-butoxyethyl groups are listed as the acid-sensitive protective group R*. The copolymer is obtd. by the polymn. using a polymn. initiator or a metal catalyst. In the case of polymn. using a polymn. initiator, further addition of a comonomer (e.g. maleic anhydride or a maleimide deriv.) capable of accelerating the polymn. is pref. The mol.wt. of the copolymer is pref. 3,000-100,000.


Inventors:
ROH CHI HYEONG
JUNG JAE CHANG
Application Number:
JP24174399A
Publication Date:
March 21, 2000
Filing Date:
August 27, 1999
Export Citation:
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Assignee:
HYUNDAI ELECTRONICS IND
International Classes:
C08F4/44; C08F32/00; C08F232/08; G03F7/039; (IPC1-7): C08F32/00; G03F7/039
Domestic Patent References:
JPH03251846A1991-11-11
JPH08240911A1996-09-17
JPS5058199A1975-05-20
JPH10218947A1998-08-18
JP2002594577A
JPH10130340A1998-05-19
Attorney, Agent or Firm:
Hiroshi Arafune (1 person outside)