To obtain a new photoresist monomer from which a photoresist polymer containing photosensitive epoxy groups can be produced by incorporating a specified compd.
This monomer contains a compd. expressed by the formula. In the formula, R is a 1-10C (1 to 10 carbon atoms) alkyl group and m is a number either 1 or 2. Because the obtd. photoresist compsn. does not contain a photoacid producing agent, or contains it only an extremely small amt., the compsn. has an advantage that it does not have problems caused by a large amt. of a photoacid producing agent. Especially, the exposed pattern is reinforced by crosslinking, fracture of the pattern in a developing process is hardly caused. Thereby, a pattern with higher density can be produced. Since diffusion of acid is not caused, an E/L margin can be enough obtd., and devices with higher reliability can be produced.
JUNG MIN HO
JUNG JAE CHANG
BOK CHEOL KYU
BAIK KI HO
