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Title:
PHOTOTRANSISTOR
Document Type and Number:
Japanese Patent JP2009060001
Kind Code:
A
Abstract:

To increase the amount of light entering a channel region of a photoelectric conversion semiconductor thin film even if a source electrode and a drain electrode are formed of a light shielding metal.

At least the photoelectric conversion semiconductor thin film is provided under a channel protective film 42. On a top surface of the channel protective film 42, a liner source electrode S and drain electrode D are provided in a mutually parallel relationship. In the photoelectric conversion semiconductor thin film provided under the channel protective film 42, a portion between the source electrode S and drain electrode D forms a channel region not covered with the source electrode S and drain electrode D. Even if the source electrode S and drain electrode D are formed of the light shielding metal, therefore, the amount of light entering the channel region of the photoelectric conversion semiconductor thin film is increased.


Inventors:
YAMAGUCHI IKUHIRO
KOBAYASHI HIROKAZU
MATSUMOTO HIROSHI
Application Number:
JP2007227562A
Publication Date:
March 19, 2009
Filing Date:
September 03, 2007
Export Citation:
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Assignee:
CASIO COMPUTER CO LTD
International Classes:
H01L31/10; H01L21/336; H01L27/146; H01L29/786
Domestic Patent References:
JP2004047719A2004-02-12
JP2006114596A2006-04-27
JP2001111021A2001-04-20
JP2006013407A2006-01-12
Foreign References:
WO1995026573A11995-10-05



 
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