To reduce variations in properties of a piezo-electric device and improve a withstand voltage and the reliability of the piezo-electric device by forming a PZT piezo-electric thin film which is superior in its crystallizability and (001) crystal orientation.
A first orientation control layer 13 made of an oxide thin film of a (100) orientation NaCl type crystal structure is laid on a board 11 of the piezo-electric device. A first electrode layer 14 made of a (100) orientation Pt thin film is laid on the layer 13. A second orientation control layer 15 is laid on the first electrode layer with its main component of titanate containing no Zr. A piezo-electric layer 16 made of a PZT thin film is laid on the layer 15. A second electrode layer 17 is laid on the piezo-electric layer.
FUJII AKIYUKI
TOMOSAWA ATSUSHI
TORII HIDEO
