Title:
PIEZOELECTRIC CRYSTAL FILM
Document Type and Number:
Japanese Patent JP3951359
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a PZT-based piezoelectric crystal film improved in surface roughness so as to facilitate electrode impartment, also improved in dielectric loss, by forming an initial crystal layer consisting of a multiple oxide containing lead, titanium, and zirconium, plus strontium and/or barium on a substrate through hydrothermal process followed by conducting a PZT crystal growth.
SOLUTION: This PZT-based piezoelectric crystal film is produced through the following two consecutive processes: (1) in a mixed solution prepared by dissolving a Pb-contg. raw material compound, Zr-contg. raw material compound, Ti-contg. raw material compound, and Sr and/or Ba-contg. raw material compound(s) in an alkaline solution of specified concentration so as to stand at respective specified concentrations, an initial crystal layer is formed on a substrate through hydrothermal process; and (2) in another mixed solution prepared by dissolving the Pb-contg. raw material compound, Zr-contg. raw material compound, and Ti-contg. raw material compound in an alkaline solution of specified concentration so as to stand at respective specified concentrations, a crystal growth layer is formed under specified conditions. The respective raw material compounds are pref. chlorides, oxychlorides, nitrates, etc.
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Inventors:
Takayuki Kimura
Hashimoto Kazuo
Chisen Hashimoto
Hashimoto Kazuo
Chisen Hashimoto
Application Number:
JP14205297A
Publication Date:
August 01, 2007
Filing Date:
May 30, 1997
Export Citation:
Assignee:
Ube Industries,Ltd.
International Classes:
C01G25/00; G01L1/16; C30B7/10; C30B29/32; H01L37/02; H01L41/187; (IPC1-7): C30B29/32; C30B7/10; G01L1/16; H01L37/02; H01L41/187
Domestic Patent References:
| JP8133735A | ||||
| JP6314828A | ||||
| JP8133737A |