圧電素子 - Hitachi Cable Ltd.

Title:

圧電素子

Document Type and Number:

Japanese Patent JP5181649

Kind Code:

B2

Abstract:

A piezoelectric film formed above a Si substrate. The piezoelectric film is formed of a potassium sodium niobate expressed by a general formula (K,Na)NbO3 with perovskite structure. A film thickness of the piezoelectric film is within a range from 0.3 μm to 10 μm. An intermediate film is formed between the Si substrate and the piezoelectric film. The intermediate film generates a stress in a compressive direction in the piezoelectric film.

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Inventors:

Kenji Shibata
Fumito Oka

Application Number:

JP2007321591A

Publication Date:

April 10, 2013

Filing Date:

December 13, 2007

Export Citation:

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Assignee:

Hitachi Cable Ltd.

International Classes:

H01L41/09; H01L41/18; H01L41/187; H01L41/22; H01L41/316; H01L41/319; H02N2/00

Domestic Patent References:

JP2007184513A
JP2007042740A
JP2007165553A
JP2007088443A
JP2007287918A
JP2007134566A
JP2007042984A
JP2007294593A
JP2004224627A

Attorney, Agent or Firm:

Tadao Hirata
Kenji Tsunoda
Yuji Iwanaga
Keiko Nakamura
Endo Wako
Takashi Nomiyama
Hiroyuki Ito

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