Title:
PIEZOELECTRIC FILM ELEMENT-MANUFACTURING METHOD, PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC DEVICE
Document Type and Number:
Japanese Patent JP2013251355
Kind Code:
A
Abstract:
To provide a piezoelectric film element-manufacturing method allowing suppression of deterioration in insulation properties of a piezoelectric film even when a lead-free piezoelectric film is finely processed by dry-etching; a piezoelectric film element; and a piezoelectric device.
In a manufacturing method of a piezoelectric film element 1, a piezoelectric film 5 consisting of a lead-free alkali niobium oxide-based compound having a perovskite structure is formed on a substrate 2, and reactive ion etching is conducted on the piezoelectric film 5 using a plasma with an electron temperature of 2.5 eV or less in an atmosphere comprising a reactive gas.
Inventors:
HORIKIRI FUMIMASA
SHIBATA KENJI
SUENAGA KAZUFUMI
WATANABE KAZUTOSHI
NOMOTO AKIRA
NOGUCHI MASAKI
SHIBATA KENJI
SUENAGA KAZUFUMI
WATANABE KAZUTOSHI
NOMOTO AKIRA
NOGUCHI MASAKI
Application Number:
JP2012124068A
Publication Date:
December 12, 2013
Filing Date:
May 31, 2012
Export Citation:
Assignee:
HITACHI CABLE
International Classes:
H01L41/22; C01G33/00; C23C14/08; H01L21/3065; H01L41/08; H01L41/09; H01L41/18; H01L41/39; H01G5/16
Domestic Patent References:
| JP2011204887A | 2011-10-13 | |||
| JP2012059909A | 2012-03-22 | |||
| JP2010087182A | 2010-04-15 | |||
| JP2012056194A | 2012-03-22 | |||
| JP2010166371A | 2010-07-29 | |||
| JP2009266911A | 2009-11-12 | |||
| JP2010165935A | 2010-07-29 | |||
| JP2009105331A | 2009-05-14 |
Attorney, Agent or Firm:
Tadao Hirata
Kenji Tsunoda
Yuji Iwanaga
Keiko Nakamura
Endo Wako
Takashi Nomiyama
Hiroyuki Ito
Kenji Tsunoda
Yuji Iwanaga
Keiko Nakamura
Endo Wako
Takashi Nomiyama
Hiroyuki Ito