PLANAR HETERO JUNCTION BIPOLAR DEVICE AND MANUFACTURING THEREOF

Title:

PLANAR HETERO JUNCTION BIPOLAR DEVICE AND MANUFACTURING THEREOF

Document Type and Number:

Japanese Patent JPS6276555

Kind Code:

A

Abstract:

Vertical AlGaAs heterojunction bipolar transistors (30) with planar structure together with fabrication methods therefor are disclosed. For an emitter (44) on top structure, the contacts (46) to the base (38) are formed by a diffusion of zinc dopants from the surface, and contacts (42) to the collector (34, 36) are formed by diffusions of sulfur dopants from the surface rather than by etch of connecting vias. Further, device isolation is also provided by zinc diffusions (54) rather than by mesa formation. These diffusions are by rapid thermal pulses.

Inventors:

NANSHII JIEI ESU GABURIERU
HAN TSUONGU YUAN
SHIBAN KEI TEIKU

Application Number:

JP15131886A

Publication Date:

April 08, 1987

Filing Date:

June 27, 1986

Export Citation:

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Assignee:

TEXAS INSTRUMENTS INC

International Classes:

H01L29/73; H01L21/203; H01L21/225; H01L21/331; H01L21/74; H01L21/761; H01L29/20; H01L29/732; H01L29/737; (IPC1-7): H01L29/20; H01L29/72

Domestic Patent References:

JPS6017958A	1985-01-29
JPS60253267A	1985-12-13

Attorney, Agent or Firm:

Asamura Akira

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