Title:
Plasma etching method
Document Type and Number:
Japanese Patent JP6320248
Kind Code:
B2
Abstract:
In a plasma etching method for forming a hole in an etching target film, a process of generating a plasma of a processing gas containing at least C x F y gas and a rare gas having a mass smaller than a mass of Ar gas into the processing chamber in the processing chamber by switching on a high frequency power application unit under a first condition and a process of extinguishing the plasma of the processing gas in the processing chamber by switching off the high frequency power application unit under a second condition are alternately repeated. A negative DC voltage from a DC power supply is applied such that an absolute value of the negative DC voltage of the second condition becomes greater than an absolute value of the negative DC voltage of the first condition.
Inventors:
Akira Nakagawa
Application Number:
JP2014180073A
Publication Date:
May 09, 2018
Filing Date:
September 04, 2014
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065; H01L21/768; H05H1/46
Domestic Patent References:
| JP201333856A | ||||
| JP2011199243A | ||||
| JP2002110650A | ||||
| JP2010219491A |
Attorney, Agent or Firm:
Hiroaki Sakai
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