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Title:
PLASMA PROCESS DEVICE AND PLASMA TREATING DEVICE
Document Type and Number:
Japanese Patent JP3960775
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To enlarge a process condition range which can form plasma, by enhancing a propagation efficiency of microwave.
SOLUTION: This plasma process device comprises: treating chambers 1, 2 for carrying out treatment using the plasma; and microwave introducing means 3a to 6a and 3b to 6b for introducing the microwave into the treating chambers. The microwave introducing means respectively include dielectric members 5a and 5b for transmission of the microwave, and a sectional shape of each of the dielectric members in a direction approximately perpendicular to a transmission direction in which the microwave is transmitted to the dielectric members is a shape of capable transmission of the microwave of an approximately single mode. A thickness T of each of the dielectric members in the transmission direction satisfies a condition of (λ×(2m+0.7)/4)≤T≤(λ×(2m+1.3)/4) when a wavelength of the microwave of single mode is λ, and an arbitrary integer is m.


Inventors:
Naoko Yamamoto
Tatsushi Yamamoto
Masaki Hirayama
Tadahiro Ohmi
Application Number:
JP2001342857A
Publication Date:
August 15, 2007
Filing Date:
November 08, 2001
Export Citation:
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Assignee:
Sharp Corporation
Tadahiro Ohmi
International Classes:
H05H1/46; C23C16/511; H01J37/32; H01L21/205; H01L21/302; H01L21/3065; (IPC1-7): H05H1/46; C23C16/511; H01L21/205; H01L21/3065
Domestic Patent References:
JP10199698A
JP11045799A
JP9069398A
JP2001274149A
JP2001176697A
Attorney, Agent or Firm:
Kuro Fukami