To provide a plasma processing apparatus in which the top surface of a placing pedestal can be processed readily in a smooth shape and lowering of the temperature of the peripheral portion of a substrate can also be prevented.
The plasma processing apparatus 5 processes a substrate W in a processing chamber 20 by making a processing gas supplied to the processing chamber 20 plasma, wherein the placing pedestal 21 for placing the substrate W on the top surface is provided in the processing chamber 20, positioning pins 25 for positioning the peripheral edge of the substrate W are protruded at a plurality of positions on the top surface of the placing pedestal 21, and the positioning pins 25 are inserted into concave portions 26 formed on the top surface of the placing pedestal 21. The top surface of the placing pedestal 21 can be processed in a smooth shape while detaching the positioning pins 25. Also, since only the positioning pins 25 are present near the peripheral edge of the substrate W placed on the top surface of the placing pedestal 21, decrease in the temperature of the peripheral edge of the substrate W can be prevented.
NOZAWA TOSHIHISA
NISHIMOTO SHINYA
KAWAMOTO SHINJI
| JPH0456146A | 1992-02-24 | |||
| JP2006041267A | 2006-02-09 |
Tetsuo Kanamoto
Miaki Kametani