To provide a plasma processing apparatus which can obtain a stable film deposition result even in the case an adhesion preventing shield is exchanged.
The plasma processing apparatus is provided with a chamber 103 maintained at a predetermined potential, a substrate stage 104 for holding a substrate in the chamber, an electrode 105 for generating plasma in the chamber by the application of alternating-current power, a conductive member 302 constituted such that the member surrounds a plasma space between the substrate stage and the electrode, thereby connecting the substrate stage and a sidewall of the chamber when the plasma is formed, and can form an opening for introducing the substrate to the substrate stage by the separation of at least part of the member due to the movement thereof by a driving mechanism when the plasma is not formed, and an adhesion-preventing shield 200 covering the surface on the plasma space side of the conductive member.
COPYRIGHT: (C)2010,JPO&INPIT
| JP2017152958 | INVISUALIZATION DEVICE |
| JP2018147698 | ELECTRODE UNIT, PLASMA PROCESSING DEVICE, AND ELECTRODE COOLING METHOD |
| JP2020047591 | HOLLOW CATHODE PLASMA SOURCE |
KONAGA KAZUYA
WATANABE EISAKU
MORIMOTO EITARO
| JPH1064850A | 1998-03-06 | |||
| JPH07126832A | 1995-05-16 | |||
| JPH06196476A | 1994-07-15 | |||
| JP2002356771A | 2002-12-13 | |||
| JP2004018885A | 2004-01-22 | |||
| JPH1064850A | 1998-03-06 | |||
| JPH07126832A | 1995-05-16 | |||
| JPH06196476A | 1994-07-15 | |||
| JP2002356771A | 2002-12-13 | |||
| JP2004018885A | 2004-01-22 |
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura
Osamu Shimoyama
Nagakawa Yukimitsu
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