Title:
プラズマ処理方法及びプラズマ処理装置
Document Type and Number:
Japanese Patent JP7220626
Kind Code:
B2
Abstract:
A plasma processing method according to an exemplary embodiment includes generating plasma from a film formation gas in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source. The plasma processing method further includes forming a protective film on an inner wall surface of a side wall of the chamber by depositing a chemical species from the plasma on the inner wall surface. In the forming a protective film, a pulsed negative direct-current voltage is periodically applied from a direct-current power source device to an upper electrode of the plasma processing apparatus.
Inventors:
Yusuke Aoki
Toshikatsu Tobana
Ikuya Takada
Shinya Morikita
Kazunobu Fujiwara
Atsushi Abe
Koichi Nagaumi
Toshikatsu Tobana
Ikuya Takada
Shinya Morikita
Kazunobu Fujiwara
Atsushi Abe
Koichi Nagaumi
Application Number:
JP2019112618A
Publication Date:
February 10, 2023
Filing Date:
June 18, 2019
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065
Domestic Patent References:
| JP2013033856A | ||||
| JP2006270018A | ||||
| JP2016012712A | ||||
| JP2014082228A |
Foreign References:
| US9034198 | ||||
| US20060037701 | ||||
| US20150340243 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka
Yoshiki Kuroki
Junji Kashiwaoka
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