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Title:
POLYCRYSTALLINE SILICON REDUCING FURNACE AND POLYCRYSTALLINE SILICON ROD
Document Type and Number:
Japanese Patent JP2006206387
Kind Code:
A
Abstract:

To provide a polycrystalline silicon reducing furnace capable of easily depositing polycrystalline silicon without causing surface profile defect or warpage, and a polycrystalline silicon rod.

The polycrystalline silicon reducing furnace has a plurality of silicon core rods 13 erected on the furnace base 11 of a hermetically closed reaction furnace, an introducing port 15 for supplying a raw material gas, and an exhaust port 16 for exhausting a gas after reaction, and the silicon rods are arranged to satisfy at least one of following conditions of (1)-(3). When there are 2 introducing ports arranged adjacent to the silicon core rod, each center of the 2 introducing ports and the center of the silicon core rod form an angle of ≥135°... (1). When there are N introducing ports (N≥3), the 2 introducing ports in N introducing ports and the silicon rod form an angel of ≥160°... (2). When there are N introducing ports (N≥3), adjacent 2 introducing ports in N introducing ports and the silicon core rod form an angle of ≥240/N° and ≤480/N° in all combination... (3).


Inventors:
SHIMIZU YUJI
MIZUSHIMA KAZUKI
Application Number:
JP2005021144A
Publication Date:
August 10, 2006
Filing Date:
January 28, 2005
Export Citation:
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Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C01B33/02
Domestic Patent References:
JPH1143317A1999-02-16
JPH06172092A1994-06-21
JP2003306321A2003-10-28
Attorney, Agent or Firm:
Masatake Shiga
Tadashi Takahashi
Masakazu Aoyama
Yasuhiko Murayama
Noriko Yanai