To provide a polycrystalline silicon reducing furnace capable of easily depositing polycrystalline silicon without causing surface profile defect or warpage, and a polycrystalline silicon rod.
The polycrystalline silicon reducing furnace has a plurality of silicon core rods 13 erected on the furnace base 11 of a hermetically closed reaction furnace, an introducing port 15 for supplying a raw material gas, and an exhaust port 16 for exhausting a gas after reaction, and the silicon rods are arranged to satisfy at least one of following conditions of (1)-(3). When there are 2 introducing ports arranged adjacent to the silicon core rod, each center of the 2 introducing ports and the center of the silicon core rod form an angle of ≥135°... (1). When there are N introducing ports (N≥3), the 2 introducing ports in N introducing ports and the silicon rod form an angel of ≥160°... (2). When there are N introducing ports (N≥3), adjacent 2 introducing ports in N introducing ports and the silicon core rod form an angle of ≥240/N° and ≤480/N° in all combination... (3).
MIZUSHIMA KAZUKI
| JPH1143317A | 1999-02-16 | |||
| JPH06172092A | 1994-06-21 | |||
| JP2003306321A | 2003-10-28 |
Tadashi Takahashi
Masakazu Aoyama
Yasuhiko Murayama
Noriko Yanai