To provide (1) a new acetal compound useful as a monomer for the production of a photoresist material having excellent adhesiveness and transparency in a photo-lithography to use light of ≤300 nm wavelength, especially KrF or ArF excimer laser light as a light source, (2) a polymer compound having excellent reactivity, rigidity and substrate adhesiveness, (3) a resist material produced by using the polymer compound as a base resin and having good resolution and etching resistance considerably superior to those of conventional material, and (4) a patterning method to use the resist material.
The polymer compound has a weight-average molecular weight of 1,000-500,000 and comprises a repeating unit expressed by general formula (4-1) or (4-2). The resist material produced by using the polymer compound as a base resin is useful for a microfabrication with electron beam or far-ultraviolet ray.
KANOU TAKESHI
HASEGAWA KOJI
NISHI TSUNEHIRO
NAKAJIMA MUTSUO
TACHIBANA SEIICHIRO
HATAKEYAMA JUN
| JPH11263754A | 1999-09-28 | |||
| JPH11242337A | 1999-09-07 | |||
| JP2000239436A | 2000-09-05 |
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
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