To provide a positive resist composition for production of VLSI or high-capacity microchips and a pattern forming method using the same, in particular, to provide a positive resist composition improved in development defective performance in microfabrication of a semiconductor element using KrF excimer laser light, an electron beam or EUV light and a pattern forming method using the same.
The positive resist composition contains: (A) a resin having a specific phenylalkyl acrylate repeating unit and a specific hydroxystyrene repeating unit; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (F) a specific fluorine-containing surfactant. The pattern forming method using the same is also provided.
MIZUTANI KAZUYOSHI
MAKINO MASAOMI
Kiyozumi Yazawa
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