Title:
POSITIVE RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME
Document Type and Number:
Japanese Patent JP2015018069
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To obtain a positive resist material that has a high effect of suppressing diffusion of an acid and high resolution and exhibits a good pattern profile and edge roughness after exposure.SOLUTION: The positive resist material includes the following polymeric compound as a base resin: the polymeric compound comprises a recurring unit in which a hydrogen atom in a carboxyl group and/or a phenolic hydroxyl group is replaced by an acid-labile group, and a recurring unit a1 and/or a recurring unit a2 expressed by general formula (1) having a hydroxyanthraquinone group and/or a hydroxy-2,3-dihydro-1,4-anthracene dione group, and has a weight average molecular weight ranging from 1,000 to 500,000. In the formula, m and n represent an integer of 1 to 3.
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Inventors:
HATAKEYAMA JUN
SAGEHASHI MASAYOSHI
SAGEHASHI MASAYOSHI
Application Number:
JP2013144419A
Publication Date:
January 29, 2015
Filing Date:
July 10, 2013
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
G03F7/039; C08F220/30; G03F7/004
Domestic Patent References:
| JP2003255543A | 2003-09-10 | |||
| JP2011150103A | 2011-08-04 | |||
| JP2003255543A | 2003-09-10 | |||
| JP2011150103A | 2011-08-04 |
Foreign References:
| US20020076641A1 | 2002-06-20 | |||
| US20020076641A1 | 2002-06-20 |
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Katsuhiko Masaki
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Katsuhiko Masaki