PURPOSE: To provide a positive type photoresist compsn. having high sensitivity without decrease in the resist performance under conditions of prebaking, and high hallation preventing effect, with which a resist pattern of high resolution can be formed.

CONSTITUTION: This resist compsn. contains an alkali-soluble resin, a compd. containing a 1,2-naphthoquinone diazide group, and at least one light-absorbing agent selected from formulae I-III by 0.1-10wt.% of the total solid content. In formulae, R1 and R2 are hydrogen atom, halogen atom, alkyl group, or alkoxy group, R3 is hydrogen atom or alkyl group, R4 is hydrogen atom, halogen atom, alkyl group, alkoxy group, hydroxyl group or nitro group, X is single bond or -C(=Q)-, l is 1 or 2, (m) is 3 or 4, and (n) is 2 or 3.