Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2003007934
Kind Code:
A
Abstract:
To overcome such a problem that the power cycle life of a power semiconductor is short because of much variation of junction temperature that follows operation stop, load fluctuation, etc.
A power semiconductor device comprises a power module where a rear pattern is soldered to a heat sink while a power switching semiconductor chip is soldered to a main circuit pattern which is formed on a front main surface with its controller provided. The temperature of the power module is detected with a temperature detecting element (10). If the detected temperature is equal to the prescribed point or below, the power module is heated by a heating means. As the heating means, a gate resistance (13), for example, is raised.
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Inventors:
TAKARA MASAYUKI
Application Number:
JP2001192844A
Publication Date:
January 10, 2003
Filing Date:
June 26, 2001
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L23/34; H02M1/00; (IPC1-7): H01L23/34; H02M1/00
Attorney, Agent or Firm:
Aoyama Ryo (1 person outside)