Title:
パワー半導体モジュール及びパワー半導体モジュールの駆動方法
Document Type and Number:
Japanese Patent JP5932269
Kind Code:
B2
Abstract:
Disclosed is a power semiconductor module which includes a unipolar type switching device using a wide bandgap semiconductor (wide bandgap semiconductor switching device) and an insulated gate bipolar transistor using a silicon semiconductor (Si-IGBT) connected in parallel, in which a chip area of the wide bandgap semiconductor switching device is smaller than that of the Si-IGBT.
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Inventors:
Kazuto Takao
Takashi Shito
Takashi Shito
Application Number:
JP2011195670A
Publication Date:
June 08, 2016
Filing Date:
September 08, 2011
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H02M1/08
Domestic Patent References:
| JP2009142070A | ||||
| JP2008061404A | ||||
| JP2006020405A |
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Mitsuyuki Matsuyama
Akira Sudo
Mitsuyuki Matsuyama