To provide a semiconductor pressure sensor which can be used even under high-pressure environments, by preventing the separation between a semiconductor substrate and a support substrate and preventing damages to a diaphragm.
In the cross section along the thickness direction N of the semiconductor substrate 11, inner surfaces 13a, 13b of a cavity section 13 of the semiconductor substrate 11 and a surface 12a of the support substrate 12 that adjoins an angle , respectively. The angles form an acute angle so that they face each other, directed toward the inside S of the cavity section 13. In the present embodiment, for example, the inner surfaces 13a, 13b form a tapered shape, in which the angle gradually decreases from a direction along the thickness direction N of the semiconductor substrate 11 in a direction along the surface 12a of the support substrate 12.
HASHIMOTO MIKIO
| JP2004325220A | 2004-11-18 |
Tadashi Takahashi
Takashi Watanabe
Masakazu Aoyama