Title:
PREVENTION OF OXIDATION OF SILICON SURFACE, FORMATION OF SILICIDE LAYER ON SILICON SURFACE AND FORMATION OF OXIDIZED LAYER ON VERTICAL SURFACE OF OVERHEAD-TYPE SEMICONDUCTOR STRUCTURE
Document Type and Number:
Japanese Patent JP3779371
Kind Code:
B2
Abstract:
PURPOSE: To provide a method for forming a smooth, flat and stable silicide layer by exposing a silicon surface to carbon-contg. plasma to form a carbon- contg. silicon surface layer in order to prevent the silicon surface from oxidation.
CONSTITUTION: Silicide/silicon interface 14 is uneven and irregular due to a fragile and heterogeneous SiO2 surface 8 on a silicon diffused layer and the advance of selective silicide formation along a specific crystal direction. Several portions of a silicide film 10 projected into the diffused layer come nearer to or reach a junction 16 between the silicon diffused layer and the silicon region 18 thereunder as shown in the figure (b), resulting in junction leaks (arrows 20). In this method, by using carbon-contg. plasma, a thin carbon-contg. silicon layer (<100&angst ) is formed on the surface of silicon or a silicon layer to suppress the oxidation on the silicon surface and form a slightly noncrystallized surface.
Inventors:
Masakatsu Domei
Application Number:
JP6878696A
Publication Date:
May 24, 2006
Filing Date:
March 25, 1996
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
C01B33/02; H01L21/265; H01L21/28; H01L21/312; H01L21/336; H01L21/762; H01L21/8234; H01L29/417; H01L29/45; H01L29/78; H01L29/49; (IPC1-7): C01B33/02; H01L21/265; H01L21/28; H01L29/78; H01L21/336
Domestic Patent References:
| JP5013376A | ||||
| JP6132252A | ||||
| JP6104213A | ||||
| JP6010135A |
Attorney, Agent or Firm:
Takehiko Suzue