Title:
PROCESSING METHOD
Document Type and Number:
Japanese Patent JP2023071253
Kind Code:
A
Abstract:
To reduce a grinding amount of a wafer after a division original point formation.SOLUTION: A processing method for processing a single crystal silicon wafer, in which a device is formed in each region that is formed so as to expose each specific crystal surface contained in a crystal surface {100}, includes a first surface and a second surface, and is segmented with a plurality of division schedule lines provided in a lattice state to the first surface, comprises: a division original point formation step of forming a division original point along each division schedule line; a separation layer formation step of forming a separation layer along the crystal surface of the second surface by moving relatively a focal point and a single crystal silicon wafer along a first direction where an angle of a sharp angle, which is parallel to the crystal surface of the second surface and is formed in a space from a crystal direction <100> is 5° or less; and a separation step of separating the single crystal silicon wafer into a first surface side wafer containing a plurality of devices formed on the first surface side and a second surface side wafer which is positioned at the second surface side and does not contain a device.SELECTED DRAWING: Figure 3
Inventors:
IGA YUTO
Application Number:
JP2021183906A
Publication Date:
May 23, 2023
Filing Date:
November 11, 2021
Export Citation:
Assignee:
DISCO ABRASIVE SYSTEMS LTD
International Classes:
H01L21/301; B23K26/53; B24B1/00; B24B7/04; B24B19/02; B28D5/04; H01L21/304
Attorney, Agent or Firm:
Akira Matsumoto
Tomohiro Okamoto
Takahiro Kasahara
Hideaki Okamoto
Takayuki Okano
Toshikazu Imato
Tomohiro Okamoto
Takahiro Kasahara
Hideaki Okamoto
Takayuki Okano
Toshikazu Imato