Title:
PRODUCTION DEVICE OF SILICON SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH02133388
Kind Code:
A
Abstract:
PURPOSE:To prevent the molten raw material from generating solidification in the contact part of partition member when the inside of the crucible receiving molten silicon raw material is divided with the partition member having small openings and a single crystal is pulled up from the inside by constituting the partition member of foamed silica glass. CONSTITUTION:The partition member 11 consisting of foamed silica glass is provided in the crucible 2 receiving molten silicon raw material 4 so as to enclose the silicon single crystal 5 to be pulled up, and the small openings 13 are provided in the partition member 11 so that the molten silicon raw material 4 is allowed to move quietly. The silicon single crystal 5 is pulled up from the inside of the partition member 11 by Czochralski method. Thus, as the partition member 11 consists of foamed silica glass, the heat radiation from the molten liquid 4 near the partition member 11 is restrained, and the molten liquid 4 is prevented from generating solidification in the contact part of the partition member 11.
Inventors:
SHIMA YOSHINOBU
Application Number:
JP28401688A
Publication Date:
May 22, 1990
Filing Date:
November 11, 1988
Export Citation:
Assignee:
NIPPON KOKAN KK
International Classes:
C30B15/22; C30B29/06; H01L21/208; (IPC1-7): C30B15/22; C30B29/06; H01L21/208
Attorney, Agent or Firm:
Muneharu Sasaki (1 person outside)
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