Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
PRODUCTION OF HIGH-PURITY ISOPHTHALIC ACID
Document Type and Number:
Japanese Patent JP3757995
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To reduce water discharge amount and efficiently obtain the subject compound by carrying out liquid phase oxidation of m-phenylene compound in acetic acid, separating the mixture into a crude product and reaction mother liquid, purifying and crystallizing the crude product and evaporating the reaction mother liquid and recovering a useful component.
SOLUTION: In this method for producing high-purity isophthalic acid, carrying out liquid phase oxidation of m-phenylene compound in acetic acid solvent and carrying out purification treatment of the resultant crude isophthalic acid, the reaction mixture is separated into oxidation reaction mother liquid and crude isophthalic acid after liquid oxidation and a part or all of the oxidation reaction mother liquid is evaporated and crude isophthalic acid is subjected to purification treatment by catalytic hydrogenation treatment, contact treatment, oxidation treatment or recrystallization and the purification treatment liquid is cooled and crystallized to separate crystals from mother liquid, and then, the oxidation reaction mother liquid is evaporated and vapor or its condensate is fed to the middle stage of a distillation tower and mother liquid subjected to crude isophthalic acid purification treatment is fed to the tower top of the distillation tower to carry out distillation and condensed acetic acid is separated from the bottom to efficiently provide the objective high-purity isophthalic acid.


Inventors:
Fumio Ogoshi
Application Number:
JP18332896A
Publication Date:
March 22, 2006
Filing Date:
July 12, 1996
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
Mitsubishi Gas Chemical Co., Ltd.
International Classes:
C07C51/44; C07C51/265; C07C51/42; C07C51/43; C07C51/487; C07C51/50; C07C63/24; (IPC1-7): C07C63/24; C07C51/265; C07C51/43; C07C51/44; C07C51/487
Domestic Patent References:
JP5058948A
Foreign References:
WO1996011899A1