Title:
PRODUCTION OF METAL INSULATION FILM SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5320776
Kind Code:
A
Abstract:
PURPOSE: To shorten the distance between sources and drains, increase switching speed and increase the scale of integration by making shallow the diffusion depth near the gates of source, grain regions and making deep the diffusion depth directly under electrode mounting holes through the use of impurities of varying diffusion coefficients respectively.
Inventors:
YASUOKA AKIHIKO
YOSHIHARA TSUTOMU
YOSHIHARA TSUTOMU
Application Number:
JP9551776A
Publication Date:
February 25, 1978
Filing Date:
August 10, 1976
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/8234; H01L21/336; H01L27/06; H01L27/088; H01L29/78; (IPC1-7): H01L21/72; H01L29/78
Domestic Patent References:
| JPS50106588A | 1975-08-22 | |||
| JPS4726080A |