Title:
PRODUCTION METHOD OF POLYCRYSTALLINE SILICON INGOT
Document Type and Number:
Japanese Patent JP2010235322
Kind Code:
A
Abstract:
To provide a method for producing a high purity polycrystalline silicon ingot from polycrystalline silicon which is produced by a zinc reduction method and subsequently taken out to the outside of a reaction apparatus.
The method for producing a polycrystalline silicon ingot includes: a melting step of melting polycrystalline silicon produced by a zinc reduction method, under the pressure of not more than 10-1 Pa at 1,410 to 1,600°C while supplying argon gas containing water vapor to the environment to obtain molten silicon; and a cooling step of successively cooling the molten silicon successively from a lower part to an upper part to crystallize to obtain a polycrystalline silicon ingot.
Inventors:
MIZOGUCHI TAKASHI
ITO KOJI
ITO KOJI
Application Number:
JP2009081798A
Publication Date:
October 21, 2010
Filing Date:
March 30, 2009
Export Citation:
Assignee:
COSMO OIL CO LTD
International Classes:
C01B33/037
Domestic Patent References:
| JP2002173311A | 2002-06-21 | |||
| JPH06227808A | 1994-08-16 | |||
| JPH10273311A | 1998-10-13 | |||
| JP2006315879A | 2006-11-24 | |||
| JP2005231956A | 2005-09-02 | |||
| JP2002308616A | 2002-10-23 | |||
| JP2004035382A | 2004-02-05 | |||
| JP2004284935A | 2004-10-14 | |||
| JP2002173311A | 2002-06-21 | |||
| JPH06227808A | 1994-08-16 |
Foreign References:
| WO1998016466A1 | 1998-04-23 |
Attorney, Agent or Firm:
Kenji Akatsuka
Yasuyuki Sakata
Ken Shibuya
Yasuyuki Sakata
Ken Shibuya
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