Title:
PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3378561
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To respectively form a first semiconductor device, composed of a thick semiconductor layer and a second semiconductor device composed of a thin semiconductor layer on plural semiconductor layers laminated and formed on the same substrate.
SOLUTION: A second alignment mark 409 for forming a second semiconductor device 412 is formed by a first alignment mark 404, used for forming a first semiconductor device 407 on a first semiconductor layer 402. After the first alignment mark 404 and a messa 408 under that mark are removed, the second semiconductor device 412, composed of a second semiconductor layer 403, is formed.
Inventors:
Hiroto Kitabayashi
Application Number:
JP2000236856A
Publication Date:
February 17, 2003
Filing Date:
August 04, 2000
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01L27/14; H01L21/027; H01L21/06; H01L21/338; H01L21/8232; H01L27/06; H01L27/095; H01L27/15; H01L29/201; H01L29/778; H01L29/812; H01L31/10; H01S5/026; (IPC1-7): H01L21/338; H01L21/027; H01L21/06; H01L21/8232; H01L27/095; H01L27/15; H01L29/778; H01L29/812; H01L31/10; H01S5/026
Domestic Patent References:
| JP63237520A | ||||
| JP2000114277A |
Other References:
ＩＥＩＣＥ Ｔｒａｎｓａｃｔｉｏｎｓ ｏｎ Ｅｌｅｃｔｒｏｎｉｃｓ，日本，２０００年６月，Ｖｏｌ．Ｅ８３−Ｃ，Ｎｏ．６，ｐ．９５０−９５８
Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｃｏｎｆｅｒｅｎｃｅ ｏｎ Ｉｎｄｉｕｍ Ｐｈｏｓｐｈｉｄｅ ａｎｄ Ｒｅｌａｔｅｄ Ｍａｔｅｒｉａｌｓ，２０００．Ｃｏｎｆｅｒｅｎｃｅ Ｐｒｏｃｅｅｄｉｎｇｓ，米国，２０００年５月，Ｐ．３２９−３３２
Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｃｏｎｆｅｒｅｎｃｅ ｏｎ Ｉｎｄｉｕｍ Ｐｈｏｓｐｈｉｄｅ ａｎｄ Ｒｅｌａｔｅｄ Ｍａｔｅｒｉａｌｓ，２０００．Ｃｏｎｆｅｒｅｎｃｅ Ｐｒｏｃｅｅｄｉｎｇｓ，米国，２０００年５月，Ｐ．３２９−３３２
Attorney, Agent or Firm:
Yoshihiko Izumi (1 person outside)