PURPOSE: To produce a photoconductor nearly free from surface defects by repeatedly carrying out the introduction of gaseous N2 or an inert gas contg. little dust into a reaction chamber and the exhaust of the gas from the chamber several times, introducing gaseous starting material and carrying out plasma chemical vapor growth.
CONSTITUTION: Gaseous starting material in a gas cylinder 12 is fed into a reaction chamber 2 through a gas introducing pipe 10 after the composition is regulated in a control box 11. The chamber 2 is then evacuated to a prescribed pressure with an evacuator 4 through the exhaust port 3. High frequency voltage is applied between the side wall 6 of the chamber 2 and a support 9 rotated by a driving device 8 from a high frequency power source 7 to generate plasma and a photoconductive layer is formed on an Al substrate 1 on the support 9 by plasma chemical vapor growth. When the photoconductor is produced, the introduction of gaseous N2 or an inert gas contg. little dust into the chamber 2 and the exhaust of the gas from the chamber 2 are repeated several times to well remove dust from the chamber 2 before the gaseous starting material is introduced.
NAKAMURA SHOJI
WAKITA KAZUKI
NAGAYAMA KATSUHIRO
OHASHI KUNIO
TONEGAWA TADASHI
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