Title:
PRODUCTION OF RESIST PATTERN FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2542800
Kind Code:
B2
Abstract:
PURPOSE: To obtain a resist pattern excellent in heat and dry etching resistances with high sensitivity without generating scum at the time of development.
CONSTITUTION: A photosensitive component contg. naphthoquinone-1,2 diazidosulfonic acid of 2,3,4-trihydroxybenzophenone and 2,3,4- trihydroxybenzophenone in a weight ratio of 20:80 to 55:45 and novolak resin preferably having a wt. average mol.wt. of ≥25,000 (expressed in terms of polystyrene) are dissolved in a weight ratio of 1:9 to 1:1 in an org. solvent to prepare a positive type photo-resist soln. This soln. is applied on a substrate for a semiconductor device and dried to form a photosensitive layer. This layer is selectively irradiated with active rays and only the irradiated part is removed by dissolution in an alkali soln. to produce the objective resist pattern.
More Like This:
Inventors:
KOMINE TAKASHI
ASAUMI SHINGO
YOKOTA AKIRA
NAKANE HISASHI
ASAUMI SHINGO
YOKOTA AKIRA
NAKANE HISASHI
Application Number:
JP13048095A
Publication Date:
October 09, 1996
Filing Date:
May 29, 1995
Export Citation:
Assignee:
TOKYO OHKA KOGYO CO LTD
International Classes:
G03F7/022; H01L21/027; (IPC1-7): G03F7/022; H01L21/027
Domestic Patent References:
| JP60159846A | ||||
| JP5254503A | ||||
| JP59142538A | ||||
| JP59165053A |
Attorney, Agent or Firm:
Agata Akira (1 person outside)