PRODUCTION OF SEMICONDUCTOR SINGLE CRYSTAL THIN FILM AND DEVICE THEREFOR

Japanese Patent JP3467960

B2

PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor single crystal thin film on the surface of a substrate by the gaseous phase growth of the single crystal under the rotation of the substrate, capable of producing a high quality epitaxial wafer by preventing the adhesion of fine particles, etc., produced from a substrate-rotating member to the main surface of the substrate.
SOLUTION: This device is used for producing a semiconductor single crystal thin film by rotating a substrate 2 set in a reaction vessel 21 with a rotation- driving member 7, supplying a reaction gas 10 on the main surface side of the substrate 2, supplying a purge gas 3a into a space 11a on the back surface side of the substrate in the reaction vessel 21 to purge the space 11a with the carrier gas. Therein, a rotation-driving member 7 is disposed in a purge gas- discharging portion 13, to which a purge gas-discharging pipe 12 is connected. A gas flow controller 8 and further a pressure-reducing pump 9 on the downstream side are disposed in the purge gas-discharging pipe 12.

JP7438399	batch heat treatment chamber
JP2011003599	APPARATUS AND METHOD OF PRODUCING SEMICONDUCTOR
JPH05175135	OPTICAL CVD APPARATUS

Munenori Tomita
Masanori Mayuzumi
Habuka etc.

JP7103896A

November 17, 2003

February 29, 1996

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Shin-Etsu Semiconductor Co., Ltd.

C23C16/455; C30B25/02; C30B25/14; C30B25/12; H01L21/205; C23C16/44; (IPC1-7): C30B25/14; H01L21/205

JP4123422A
JP7122490A
JP62133069A
JP62235729A
JP410528A
JP4370924A
JP669147A
JP6177060A
JP6220642A
JP766142A
JP7169706A
JP8325736A

Chieko Tateno

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