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Title:
PRODUCTION OF SILICON-BASE HOLE TRANSPORT MATERIAL
Document Type and Number:
Japanese Patent JP3614222
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To produce a hole transport material used for imparting charge- transport capability to a polysiloxane resin and soluble in this resin.
SOLUTION: Alkoxysilyl groups are introduced through hydrocarbon groups onto a part of or the whole of the aromatic groups of a hole transport compound which comprises a tertiary amine having a plurality of aromatic groups and has an ionization potential of 4.5-6.2eV to produce a silicon-base hole transport material. The unsaturated aliphatic groups bonded to the aromatic groups forming the hole transport compound are combined with an alkoxysilane having hydrogen atoms and alkoxy groups as the substituents for silicon atoms by hydrosilylation in the presence of a platinum compound catalyst, and the produced silicon-base hole transport material is brought into contact with an adsorbent for the platinum compound to remove the platinum compound together with the adsorbent to thereby reduce the platinum content to 10ppm or less.


Inventors:
Nobuo Kushibiki
Takahisa Takeuchi
Application Number:
JP28764495A
Publication Date:
January 26, 2005
Filing Date:
November 06, 1995
Export Citation:
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Assignee:
Dow Corning Asia Co., Ltd.
International Classes:
C07F7/18; C08G77/26; C08L83/04; G03G5/05; G03G5/06; G03G5/07; (IPC1-7): C07F7/18; G03G5/06
Domestic Patent References:
JP8319353A
JP5249720A
JP8062864A
JP8272212A
JP55095953A
JP50015899A
JP5323634A
JP9124943A
JP9188764A
JP9127710A
JP9124665A
JP9190004A
JP9124794A
Foreign References:
US5232801
US5187310
US5290963
Attorney, Agent or Firm:
Takashi Ishida
Taijiro Ogawa
Toshio Toda
Masaya Nishiyama