PURPOSE: To obtain a single crystal silicon carbide thin film having a sharp low-defect hetero-interface on a silicon substrate by holding a single crystal silicon in a vacuum vessel, supplying a grain contg. at least carbon on the single crystal silicon surface and irradiating the surface with a light having a wavelength in the UV region to heat a single crystal substrate to ≥600°C.

CONSTITUTION: A single crystal silicon substrate 1 is set on a heating mechanism 3 in a vacuum vessel 2, and carbon 5 is placed on a electron-beam vaporization source 4 to vaporize a grain 6 contg. carbon which is supplied to the substrate 1 surface. The substrate 1 is heated to ≥600°C by the mechanism 3, and the substrate surface is irradiated with a light 9 having a wavelength in the UV region from a light source 7 through an optical window 8.