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Patent Searching and Data


Title:
PRODUCTION OF SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH11106280
Kind Code:
A
Abstract:

To provide a method for producing a single crystal, by which the lowering of quality and breakage of a crucible, caused by the solidification of a liquid sealing material at a temperature-decreasing step after finishing crystal growth by a simpler apparatus construction.

For example, a reducing operation of an atmosphere gas pressure is carried out before solidifying a molten liquid 14 of a liquid sealing material surrounding a grown crystal 13 to generate bubbles 15 of the atmosphere gas dissolved in the molten liquid in the method for producing the single crystal. The stress generated when the liquid sealing material thereafter is solidified and shrunk is absorbed by the bubbles 15. The excess stress is not placed on the grown crystal 13 thereafter and thereby the increase of dislocation is reduced. Accordingly, a good quality single crystal can be obtained without using an apparatus having a complicated construction, and the breakage of a crucible 6 is prevented.


Inventors:
SAKASHITA YOSHIHIKO
UEHARA KAZUHIRO
KAWANAKA TAKEO
OKADA HIROSHI
Application Number:
JP26889897A
Publication Date:
April 20, 1999
Filing Date:
October 01, 1997
Export Citation:
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Assignee:
KOBE STEEL LTD
International Classes:
C30B11/00; C30B27/00; C30B29/40; (IPC1-7): C30B11/00; C30B27/00
Attorney, Agent or Firm:
Toshio Yasuda