To provide a pyroelectric infrared sensor capable of heightening output voltage and improving an S/N ratio.
A pyroelectric infrared sensor 10 includes plural light receiving parts 3 on one surface side of a diaphragm part 2 provided on one surface side of a substrate 1. Each of the light receiving parts 3 has plural light receiving elements 3a each having a pyroelectric body thin film 33 between a first electrode 31 and a second electrode 32 facing each other in a thickness direction of the diaphragm part 2, and the plural light receiving elements 3a are connected in series. That is, each of the light receiving parts 3 is divided into the plural light receiving elements 3a connected in series. In addition, the plural light receiving parts 3 are connected in anti-series.
| WO/2014/097940 | PHOTOSENSOR LENS |
| JP2001308306 | SEMICONDUCTOR DEVICE AND ITS DRIVING METHOD |
| JPH0628660 | [Name of device] Molded optical sensor |
KAWADA HIROSHI
KIRIHARA MASAO
MIYATAKE TAKEHIRO
KAJIMOTO TSUYOSHI
AIZAWA KOICHI
Mizuhiji Katsuhisa
Takeshi Sakaguchi
Hidetoshi Kitade