Quantum cascade laser

Japanese Patent JP6163080

B2

A quantum cascade laser includes a semiconductor substrate, and an active layer being provided on the substrate, and having a cascade structure in which quantum well emission layers and injection layers are alternately laminated, and the laser has a base portion including the substrate, and a stripe-shaped ridge portion including the active layer. Further, a reflection control film is formed from a ridge end face over a base end face on an end face in a resonating direction of the laser, and, on the base end face, for a second side and a third side adjacent to a first side on the ridge portion side of the base end face, and a fourth side facing the first side, the reflection control film is formed on a region other than regions near those three sides with predetermined widths.

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Atsushi Sugiyama
Edamura Tadataka
Naoki Daikusa

JP2013223262A

July 12, 2017

October 28, 2013

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Hamamatsu Photonics Co., Ltd.

H01S5/028; H01S5/34

JP2008010733A
JP1152788A
JP6204602A
JP5029702A

Yoshiki Hasegawa
Yoshiki Kuroki
Satoru Ishida

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