QUARTZ GLASS COMPONENT FOR PRODUCTION OF SEMICONDUCTOR

Japanese Patent JPS63215600

A

PURPOSE:To obtain a quartz glass component for producing semiconductor free from lowering of viscosity and deformation in use at high temperature, by controlling the total content of metal impurity of an alkali metal or the like to low value and forming cristobalite layer on the surface of glass. CONSTITUTION:A quartz raw material is crushed and purified to reduce total content of metal impurity other than an alkali metal to <=30ppm and maintained in melt state to scatter the alkali metal and total content of Na, K and Li is reduced to <=2ppm. Then the quartz in molded to the prescribed form and heated at high temperature for a long time to provide the aimed quartz glass component for semiconductor production having cristobalite layer formed at a ratio of 0.5-2wt.% per unit volume on at least outside surface of the component. When the quartz glass component is used as a crucible for semiconductor production, furnace center tube, etc., the component is free from deformation even in use at high temperature for long time and provides no bad influence to the characteristics of semiconductor substances.

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SASAKI YASUSANE
HONMA HIROYUKI
SAKIKUBO KUNIHIKO

JP4696287A

September 08, 1988

March 02, 1987

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TOSHIBA CERAMICS CO

C03B32/00; C03B19/06; C03B20/00; C03B32/02; C03C1/02; C03C3/06; C03C23/00; C30B15/10; C30B35/00; H01L21/22; (IPC1-7): C03B20/00; C03B32/00; C03C3/06; C03C23/00; C30B35/00; H01L21/22

Takehiko Suzue

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