To provide a radiation detector for larger area where radiation is detected.
A photodiode array 1 comprises P+ diffusion layers 4 and 5, N+ channel stop layers 6 and 7, N+ diffusion layer 8 and the like. The P+ diffusion layers 4 and 5 and the N+ channel stop layers 6 and 7 are provided on the rear surface side to the incident surface of a semiconductor board 3. The N+ channel stop layer 6 is so provided in lattice shape between adjoining P+ diffusion layers 4 and 5 as to separate them. The N+ channel stop layer 7 is so provided in frame as to be continuous to the N+ channel stop layer 6 outside the array of the P+ diffusion layer 5. The N+ channel stop layer 7 is wider than the N+ channel stop layer 6. A scintillator is optically connected to the incident surface of the semiconductor board 3.
AKAHORI HIROSHI
MURAMATSU MASAHARU
| JPH10209417A | 1998-08-07 | |||
| JPH06140613A | 1994-05-20 | |||
| JPH03148869A | 1991-06-25 | |||
| JPH09331051A | 1997-12-22 |
| US5777352A | 1998-07-07 |
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