To provide a single-chip semiconductor light-emitting device which is easily manufactured and provides a bright white emission.

Boron and the like is ion-implanted into a surface layer of an n-type SiC substrate 10 in which nitrogen is doped, to form an n-type SiC 11. On the n-type SiC 11, there are sequentially laminated an n-type nitride semiconductor layer 12, an n-type AlGaN layer 13, an InGaN layer 14, a p-type AlGaN layer 15, and a p-type GaN layer 16. An n-type ohmic electrode 20 is formed on the rear surface of the n-type SiC substrate 10 while forming a p-type ohmic electrode 21 on the front surface of the p-type GaN layer 16. With this configuration, if a voltage is applied in forward direction between the p-type ohmic electrode 21 and the n-type ohmic electrode 20, a current flows between both electrodes so that the InGaN layer 14 emits blue light. Excited by the blue light, the n-type SiC 11 emits yellow light. The two colors are combined to allow emission close to white.