To provide a radiation-sensitive composition used for patterning due to double exposure, suitably used for a liquid immersion exposure process, such as water, without requiring separate formation of an upper layer film, and which os suitably used for forming a first resist layer.
The radiation-sensitive composition contains (A) a polymer, including a repeating unit (1) having an acid dissociation group; (E) a polymer including a repeating unit having fluorine atoms; (C) a radiation-sensitive acid generation agent; and (D) a solvent used, in a process (1) of a resist pattern forming method including the process (1) for forming a first resist pattern by using a first radiation-sensitive composition, a process (2) for performing processing on the first resist pattern to be insoluble for a second radiation-sensitive composition, by using a resist pattern insolubilizing resin composition, and a process (3) for forming a second resist pattern by using the second radiation-sensitive composition.
ANNO YUSUKE
| JP2011008236A | 2011-01-13 | |||
| JP2010145537A | 2010-07-01 | |||
| JP2010039036A | 2010-02-18 | |||
| JP2011008235A | 2011-01-13 | |||
| JP2010079074A | 2010-04-08 |
| WO2008114644A1 | 2008-09-25 | |||
| WO2010007993A1 | 2010-01-21 | |||
| WO2010007976A1 | 2010-01-21 |
Koji Kikawa
Hiroyuki Sato
Shigeru Koike