Title:
REFERENCE VOLTAGE SETTING DEVICE
Document Type and Number:
Japanese Patent JPH03136114
Kind Code:
A
Abstract:
PURPOSE:To prevent the reference voltage from being fluctuated by an ambient temperature by providing a first and a second transistors, a first and a second resistance islands, a first resistance load and a second resistance load. CONSTITUTION:In a P type semiconductor substrate 8, a first and a second resistance islands 15, 16 consisting of N layers are formed, a first and a second resistance loads 5, 6 consisting of P<+> layers are formed in each of them, and also, both the N<+> layers are connected to emitters of a first and a second transistors 3, 4, respectively. Subsequently, the island potential is set to potentials of a high potential side of both the resistance loads 5, 6, that is, the emitters of both the transistors, respectively, and both diodes 17, 18 are both held in a reverse bias state. In this case, N layers are formed so that an area ratio of a first and a second resistance islands 15, 16 becomes a prescribed value. Accordingly, in a state that an ambient temperature is high, leak currents of both the resistance islands 15, 16 work in the direction for increasing and decreasing reference potentials of a first and a second transistors 3, 4. In such a way, the reference voltage is held constant irrespective of an ambient temperature.
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Inventors:
ARIMOTO MASAO
Application Number:
JP27542189A
Publication Date:
June 10, 1991
Filing Date:
October 23, 1989
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L27/06; G05F3/30; H01L21/822; H01L21/8222; H01L27/04; (IPC1-7): G05F3/30; H01L27/06
Attorney, Agent or Firm:
Shigeaki Yoshida (2 outside)