Title:
REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK
Document Type and Number:
Japanese Patent JP2019139085
Kind Code:
A
Abstract:
To provide a reflective photomask blank and a reflective photomask capable of achieving improvement in transfer performance to a semiconductor substrate and cleaning resistance.SOLUTION: A reflective photomask blank 1 includes: a substrate 11; a reflection layer 13 which is formed on the substrate 11 and reflects incident light; and an absorption layer 15 which has an indium oxide film 15a having a single-layer structure and having a film thickness of 18 nm or more and 45 nm or less, is laminated on the reflection layer 13, and absorbs incident light.SELECTED DRAWING: Figure 1
Inventors:
FURUMIZO TORU
FUKUGAMI NORIHITO
FUKUGAMI NORIHITO
Application Number:
JP2018022946A
Publication Date:
August 22, 2019
Filing Date:
February 13, 2018
Export Citation:
Assignee:
TOPPAN PRINTING CO LTD
International Classes:
G03F1/24; G03F1/54
Domestic Patent References:
JP2006190900A | 2006-07-20 | |||
JP2007207829A | 2007-08-16 | |||
JP2017151483A | 2017-08-31 | |||
JP2007241065A | 2007-09-20 | |||
JP2010103463A | 2010-05-06 | |||
JP2016201458A | 2016-12-01 | |||
JP2011006725A | 2011-01-13 |
Foreign References:
US20160124297A1 | 2016-05-05 |
Other References:
HEE YOUNG KANG ET.AL: "Optical Performance of Extreme Ultraviolet Lithography Mask with an Indium Tin Oxide Absorber", JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. Vo. 12, JPN7021005114, 2012, US, pages 3330 - 3333, ISSN: 0004649020
Attorney, Agent or Firm:
Ichi Hirose
Toru Miyasaka
Toru Miyasaka